Light-emitting device and manufacturing method thereof

ABSTRACT

An EL light-emitting element in which a lower electrode layer, an EL layer, and an upper electrode layer are stacked is formed on a substrate, and a wiring is formed on a counter substrate. Further, the substrate and the counter substrate are bonded so that the wiring is in physical contact with the upper electrode layer of the EL element. Accordingly, the wiring can serve as an auxiliary wiring for increasing conductivity of the upper electrode layer. With such an auxiliary wiring, a potential drop due to the resistance of the upper electrode layer can be suppressed even in the light-emitting device whose light-emitting portion is large.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates to a light-emitting device including anorganic EL element and a manufacturing method thereof.

2. Description of the Related Art

An organic EL element has been actively researched and developed. In thefundamental structure of the organic EL element, a layer containing alight-emitting organic compound is provided between a pair ofelectrodes. By applying a voltage to this element, light emission fromthe light-emitting organic compound can be obtained.

The organic EL element can be formed into a film shape; thus, alarge-area element can easily be formed. Therefore, the organic ELelement has a high utility value as a surface light source that can beapplied to lighting or the like.

For example, a lighting device including an organic EL element isdisclosed in Patent Document 1.

In addition, as for an organic EL element, there are a bottom emissiontype in which light emission is extracted from the substrate side, a topemission type in which light emission is extracted from the substratesurface side, and a dual emission type in which light emission isextracted from the both side of the substrate side and the substratesurface side.

REFERENCE

-   [Patent Document 1] Japanese Published Patent Application No.    2009-130132

SUMMARY OF THE INVENTION

In the case where an organic EL element (hereinafter, also referred toEL element or light-emitting element) is applied to a lighting device,as the area of a light-emitting portion increases, a potential drop dueto the resistance of an upper electrode and a lower electrode of the ELelement tends to be significant. When the potential drop is significant,there is a problem in that a difference in luminance might be seen. Inorder to solve the problem, the upper electrode or the lower electrodeneeds to be provided with an electrode as an auxiliary (also referred toas auxiliary electrode or auxiliary wiring) which is formed using amaterial having low resistivity.

In particular, a light-transmitting material which is used for atransparent electrode on the light extraction side has relatively highresistance; therefore, a need for providing an auxiliary electrode ishigh. However, particularly in the case of a top emission type(including a dual emission type) in which light emission is obtainedfrom the substrate surface side, a pattern of the auxiliary electrodeneeds to be formed after formation of the EL element; accordingly, theEL element might be damaged. For example, in the case where a conductivefilm to be the auxiliary electrode is formed by a sputtering method,thermal and physical damage is concerned. Further, when the conductivefilm is processed by a photolithography method or the like, opticaldamage, thermal damage, melting of the EL element due to an organicsolvent or the like in removal of a resist, or the like is concerned.

The present invention is made in view of the foregoing technicalbackground. Accordingly, an object of one embodiment of the presentinvention is to provide a light-emitting device suitable for increasingthe area of a light-emitting portion. Further, another object of oneembodiment of the present invention is to provide a light-emittingdevice in which a potential drop due to the resistance of an upperelectrode is suppressed. Another object of one embodiment of the presentinvention is to provide a light-emitting device with high reliability.

One embodiment of the present invention achieves at least one of theabove objects.

One embodiment of the present invention is a light-emitting deviceincluding a first substrate including a light-emitting element in whicha lower electrode layer, a layer containing at least a light-emittingorganic compound, and an upper electrode layer are stacked in this orderover an insulating surface; and a second substrate including one surfaceprovided with an auxiliary wiring. The first substrate and the secondsubstrate are faced to each other so that the upper electrode layer andthe auxiliary wiring are electrically connected to each other.

In such a manner, a wiring is formed on the counter substrate side(second substrate side) and the wiring is in physical contact with theupper electrode of the EL element formed over the substrate (firstsubstrate); accordingly, the wiring can serve as the auxiliary wiringfor increasing conductivity of the upper electrode. According to such astructure, even in a light-emitting device with a large area, apotential drop due to the resistance of the upper electrode can besuppressed and reliability can be high.

Another embodiment of the present invention is the light-emitting devicewhose auxiliary wiring contains Cu.

The use of a material containing Cu for a wiring formed over the countersubstrate can effectively increase the conductivity of the upperelectrode.

In addition, another embodiment of the present invention is thelight-emitting device in which the first substrate is formed using ametal or an alloy whose surface is subjected to insulation treatment.

By using the metal substrate whose surface is subjected to insulationtreatment as the substrate where the EL element is provided, heatproduced at the time of driving the light-emitting device can beeffectively released, so that the light-emitting device can have highreliability.

Further, a method for manufacturing a light-emitting device, accordingto one embodiment of the present invention, includes the steps offorming a light-emitting element in which a lower electrode layer, alayer containing a light-emitting organic compound, and an upperelectrode layer are stacked in this order over one surface of asubstrate (first substrate); forming an auxiliary wiring over a countersubstrate (second substrate); and bonding the first substrate to thesecond substrate so that the upper electrode layer and the auxiliarywiring are electrically connected to each other.

A light-emitting device manufactured by such a manufacturing method canhave high reliability with a potential drop due to the resistance of theupper electrode suppressed. In addition, the auxiliary wiring forincreasing conductivity of the upper electrode is provided over thecounter substrate, and thus, damage to an EL element in forming theauxiliary wiring can be avoided, so that the light-emitting device canhave high reliability.

Further, another method for manufacturing a light-emitting device,according to one embodiment of the present invention, includes the stepsof forming a light-emitting element in which a lower electrode layer, alayer containing a light-emitting organic compound, and an upperelectrode layer are stacked in this order over one surface of asubstrate (first substrate); detecting the position of a defectiveportion in the light-emitting element by applying a voltage between thelower electrode layer and the upper electrode layer and irradiating thedefective portion with laser light to repair the defective portion;forming an auxiliary wiring over a counter substrate (second substrate);and bonding the first substrate which includes the light-emittingelement whose defective portion is repaired to the second substrate sothat the upper electrode layer and the auxiliary wiring are electricallyconnected to each other.

The auxiliary wiring is provided over the counter substrate side and thesubstrate is bonded to the counter substrate so that the auxiliarywiring is in contact with the upper electrode of the EL element, so thata potential drop due to the resistance of the upper electrode can besuppressed; accordingly, the light-emitting device can have highreliability. In addition, the auxiliary wiring for increasingconductivity of the upper electrode is provided over the countersubstrate, and thus, damage to an EL element in forming the auxiliarywiring can be avoided, so that the light-emitting device can have highreliability.

As described above, before the substrate (first substrate) where thelight-emitting element (also referred to as EL element) is formed isbonded to the counter substrate (second substrate), light is emittedfrom the EL element by applying a voltage between the upper electrodelayer and the lower electrode layer of the EL element, whereby adefective portion can be detected in advance. Further, the defectiveportion is irradiated with laser light just after the EL element isformed to repair the defective portion; thus, even in the case where astructural body is provided over the EL element, the defective portionof the EL element can be easily detected and repaired without influenceof the structural body, so that the light-emitting device can have highreliability. In addition, the method for manufacturing a light-emittingdevice including the step of detecting and repairing a defective portionas described above can be employed when the area of light-emittingportion is increased, and thus, is suitable for increasing the area oflight-emitting portion.

In addition, another embodiment of the present invention is a method formanufacturing a light-emitting device according to the above method,which includes a step of providing the structural body which is over thesecond substrate and diffuses light emitted from the light-emittingelement and whose focal surface with respect to visible light does notcross the light-emitting element.

Further, the structural body for diffusing light emitted from the ELelement is formed over the counter substrate; thus, the repaired regionby irradiation with laser light from which light emission can not beobtained becomes inconspicuous by light which is emitted from anothernormal region diffused by the structural body.

It is preferable that the structural body provided over the countersubstrate and for diffusing light emitted from the EL element beprovided so that focal surface of the structural body with respect tovisible light does not cross the light-emitting element (or a defectiveportion in the EL element) when seen from the counter substrate sidebecause when the EL element emits light and is seen from the countersubstrate side, the repaired portion becomes inconspicuous withoutforming an image on the repaired portion, which is further effective.Particularly, when the structural body for diffusing light emitted fromthe EL element has a structure in which two kinds of microlens arrayswhich are different in shapes are stacked, the focal surfaces of themicrolens arrays can be separated enough from the EL element; thus, therepaired portion from which light emission can not be observed becomesmore inconspicuous.

In addition, a method for manufacturing a light-emitting device,according to one embodiment of the present invention, is characterizedin that when the position of a defective portion in the light-emittingelement is detected by applying a voltage between the lower electrodelayer and the upper electrode layer, the defective portion is detectedby measuring visible light or infrared light.

A light-emission defect of an EL element may include phenomena ofgenerating an area in which luminance intensity (also referred to asluminance) is locally high or low or in which light emission can not beobtained. Therefore, the defective portion can be detected by measuringlight intensity of wavelength in the visible light region. In addition,a potential defective portion in which luminance intensity is notdifferent from another normal region but current flowing therein islarger than another normal region produces much heat. Such a potentialdefective portion can be detected in advance by observing infrared lightto detect the heat-producing portion.

In addition, another embodiment of the present invention is a method formanufacturing a light-emitting device, which includes a step ofdetecting the presence or absence of a defect in the following manner: avoltage is applied between the lower electrode layer and the upperelectrode layer before the first substrate and the second substrate arebonded, and current flowing between the lower electrode layer and theupper electrode layer and assumed current.

A short circuit of the upper electrode and the lower electrode of the ELelement or a potential defect due to an incompletely short circuit inwhich the EL layer is relatively thin appears as increase in currentflowing when a voltage is applied between the upper electrode and thelower electrode. Accordingly, current value between the upper electrodeand the lower electrode and current value assumed in the normalcondition are compared with each other, so that whether there is ashort-circuited portion or a potential defective portion in the ELelement or hot can be determined in advance.

In addition, a method for manufacturing alight-emitting device,according to one embodiment of the present invention, is characterizedin that a substrate formed of a metal or an alloy whose surface issubjected to insulation treatment is used as the first substrate.

By using the metal substrate whose surface is subjected to insulationtreatment as the substrate where the EL element is provided, heatproduced at the time of driving the light-emitting device can beeffectively released, so that the light-emitting device can have highreliability.

Note that in this specification, an EL layer refers to a layer providedbetween a pair of electrodes of a light-emitting layer and including atleast a layer containing a light-emitting organic compound (alsoreferred to as light-emitting layer), or a stack including thelight-emitting layer.

According to one embodiment of the present invention, a light-emittingdevice which is suitable for increasing the area of a light-emittingportion can be provided. Further, a light-emitting device in which apotential drop due to the resistance of an upper electrode is suppressedcan be provided. Further, a highly-reliable light-emitting device can beprovided.

BRIEF DESCRIPTION OF THE DRAWINGS

FIGS. 1A and 1B illustrate a light-emitting device according to oneembodiment of the present invention.

FIGS. 2A and 2B illustrate a light-emitting device according to oneembodiment of the present invention.

FIGS. 3A and 3B illustrate a light-emitting device according to oneembodiment of the present invention.

FIGS. 4A to 4C illustrate a method for manufacturing a light emittingdevice, according to one embodiment of the present invention.

FIGS. 5A and 5B illustrate a method for manufacturing a light-emittingdevice, according to one embodiment of the present invention.

FIGS. 6A to 6C each illustrate a structure of a light-emitting elementaccording to one embodiment of the present invention.

FIGS. 7A and 7B each illustrate a lighting device according to oneembodiment of the present invention.

FIGS. 8A and 8B each illustrate a light-emitting device according to oneembodiment of the present invention.

FIGS. 9A and 9B illustrate a method for manufacturing a light-emittingdevice, according to one embodiment of the present invention.

FIGS. 10A to 10C illustrate a method for manufacturing a light-emittingdevice, according to one embodiment of the present invention.

FIG. 11 illustrates a method for manufacturing a light-emitting device,according to one embodiment of the present invention.

FIG. 12 illustrates a process for repairing a light-emission defect in alight-emitting device, according to one embodiment of the presentinvention.

DETAILED DESCRIPTION OF THE INVENTION

Embodiments will be described in detail with reference to the drawings.Note that the invention is not limited to the following description, andit will be easily understood by those skilled in the art that variouschanges and modifications can be made without departing from the spiritand scope of the invention. Therefore, the present invention should notbe construed as being limited to the description in the followingembodiments. Note that in the structures of the invention describedbelow, the same portions or portions having similar functions aredenoted by the same reference numerals in different drawings, anddescription of such portions is not repeated.

Note that in each drawing described in this specification, the size, thelayer thickness, or the region of each component is exaggerated forclarity in some cases. Therefore, embodiments of the present inventionare not limited to such scales.

Embodiment 1

In this embodiment, a structure of a light-emitting device according toone embodiment of the present invention will be described with referenceto FIGS. 1A and 1B, FIGS. 2A and 2B, and FIGS. 3A and 3B.

Structural Example

A light-emitting device 100, described as an example in this embodimentis a top-emission light-emitting device in which light is emitted to aside opposite to a substrate where an EL element is provided.

FIG. 1A is a schematic top view of the light-emitting device 100described as an example in this embodiment. FIG. 1B is a schematiccross-sectional view taken along cutting line A-A′ in FIG. 1A. Note thatan upper electrode layer 107, a lens array 125, and a lens array 127,and the like which are described later are not illustrated in FIG. 1Afor simplicity.

First, the light-emitting device 100 will be briefly described. Thelight-emitting device 100 includes an EL light-emitting element (ELelement) in which a lower electrode layer 103, an EL layer 105, and theupper electrode layer 107 are stacked between a substrate 101 and acounter substrate 121.

Further, the light-emitting device 100 includes main wirings 102 a and102 b over the substrate 101, a planarization film 109 and the lowerelectrode layer 103, the EL layer 105, and the upper electrode layer 107over the planarization film 109. In addition, the counter substrate 121includes the lens arrays 125 and 127. The substrate 101 and the countersubstrate 121 are surrounded by and sealed with a sealing material 113,and a sealant 111 is provided on an inner side than the sealing material113.

In addition, an auxiliary wiring 123 is provided over a surface of thecounter substrate 121, which faces the substrate 101, and is in contactwith the upper electrode layer 107. Further, a connector 115 is providedin a region not overlapping with the lower electrode layer 103, and theauxiliary wiring 123 is electrically connected to the upper electrodelayer 107 through the connector 115.

Next, a configuration of the light-emitting device 100 will be describedin detail.

The substrate 101 has an insulating surface and is formed using amaterial capable of withstanding heat in a process of manufacturing thelight-emitting device 100. It is preferable that a substrate whosesurface is subjected to insulation treatment, which is formed using amaterial having high thermal conductivity such as a metal or an alloyand be used as the substrate 101, because heat produced at the time ofdriving the light-emitting device 100 can be effectively released. Forexample, a metal substrate over which an insulating film is formed by aCVD method, a sputtering method, or the like, or a metal substrate whosesurface is subjected to insulation treatment by an anodic oxidationmethod or the like can be used. With the surface subjected to insulationtreatment, the metal substrate can be suppressed from corroding by anatmosphere outside the light-emitting device 100; thus, a light-emittingdevice can have high reliability.

In this embodiment, a metal substrate formed of aluminum, whose surfaceis oxidized by an anodic oxidation method to form aluminum oxide (alsoreferred to as anodizing treatment) is used as the substrate 101.

The main wirings 102 a and 102 b formed over the substrate 101 areelectrically connected to the upper electrode layer 107 and the lowerelectrode layer 103 of the EL element, respectively, through contactholes provided in the planarization film 109. In addition, the mainwirings 102 a and 102 b are led to an outer side than a region where themain wirings 102 a and 102 b is overlapped with the counter substrate121, and can be connected to an AC-DC converter. An AC-DC converterconverts an alternating current voltage from an external power sourcefor home use or the like into a direct current voltage adjusted to anappropriate voltage for driving the light-emitting device 100.

The main wirings 102 a and 102 b preferably have low-resistanceconductivity. For example, a conductive film which is relatively thickand is formed by a plating method or the like can be used. In addition,it is preferable that the main wirings 102 a and 102 b be formed by aprinting method such as a screen printing method, because the number ofsteps can be reduced and low-resistance wirings can be formed.

The planarization film 109 is formed over the main wirings 102 a and 102b. In addition, the planarization film 109 has contact holes reachingthe main wirings 102 a and 102 b. Here, when a metal substrate whosesurface is insulated is used as the substrate 101, for example, theinsulating surface might have a pin hole or an uneven portion. Such apin hole and an uneven portion can be covered with the planarizationfilm 109 provided over the substrate 101, which is effective. Further,even in the case where the main wirings 102 a and 102 b are formed by aprinting method or the like, uneven surfaces of the main wirings 102 aand 102 b can be covered with the planarization films 109, so thatplanarized top surfaces of the planarization films 109 over the mainwirings 102 a and 102 b can be obtained; thus, the EL element can bealso formed over the main wirings 102 a and 1026 and a light-emittingarea can be increased.

The lower electrode layer 103 forming the EL element is electricallyconnected to the main wiring 102 b through one of the contact holesprovided in the planarization film 109. Further, the EL layer 105 isformed to cover the lower electrode layer 103. Furthermore, the upperelectrode layer 107 is formed to cover the EL layer 105 and iselectrically connected to the main wiring 102 a through another one ofthe contact holes provided in the planarization film 109.

The EL element included in the light-emitting device 100 described as anexample in this embodiment is a top-emission EL element in which lightis emitted to the substrate surface side. Thus, a material having aproperty of transmitting light emitted from the EL layer 105 is used forthe upper electrode layer 107. In addition, a material having a propertyof reflecting light emitted from the EL layer 105 is used for a surfaceof the lower electrode layer 103.

Therefore, in the light-emitting device 100, light can be obtained fromthe surface side of the substrate 101 by applying a voltage between thewirings 102 a and 102 b which are led to an outer side than the countersubstrate 121.

A material having a property of transmitting light emitted from the ELelement can be used for the counter substrate 121. For example, anextremely thin glass substrate with a thickness of 25 μm to 100 μm canbe used as the counter substrate 121. Such a glass substrate isextremely lightweight and can avoid entry of an impurity such as waterfrom outside. In addition, the substrate is flexible, so that thelight-emitting device 100 can be bent. Accordingly, the lightweight,highly reliable, and flexible light-emitting device 100 can bemanufactured.

The plurality of auxiliary wirings 123 is provided over the surface ofthe counter substrate 121, which faces the substrate 101. The auxiliarywiring 123 preferably has low-resistance conductivity. It isparticularly preferable to use copper for a conductive material used forthe auxiliary wiring 123, because wiring resistance can be reduced. Inthe case of using aluminum for a conductive material used for theauxiliary wiring 123, contact resistance might be increased owing toreaction at the interface between the auxiliary wiring 123 and the upperelectrode layer 107 caused depending on a material of the upperelectrode layer 107 of the EL element. Thus, it is preferable that asurface of the auxiliary wiring 123, which is in contact with the upperelectrode layer 107 be covered with a thin film formed of ahigh-melting-point material such as titanium.

Further, the width of the auxiliary wiring 123 is preferably as small aspossible because the auxiliary wiring 123 is provided on thelight-emission side of the EL element. The smaller the width of thewiring is, the more the area from which light emission is extracted canbe increased. The width of the wiring is determined as appropriate inconsideration of wiring resistance and the light-emitting area.

Note that in this embodiment, the auxiliary wirings 123 are not limitedto being arranged in parallel in one direction, and the auxiliarywirings 123 may be arranged in grid. Further, the auxiliary wiring 123is not necessarily long across the light-emitting element, and may becut to the appropriate length or may be dotted and arranged in theappropriate position.

The substrate 101 and the counter substrate 121 are surrounded by andsealed with the sealing material 113. The sealing material 113 ispreferably a material which is not permeable to an impurity such aswater. Further, the sealing material 113 may contain a drying agent.

In addition, the sealant 111 is provided between the substrate 101 andthe counter substrate 121. A material which contains an impurity such aswater as little as possible is preferably used for the sealant 111.Here, the refractive index of a material used for the sealant 111 ispreferably adjusted to be higher than that of the upper electrode layer107 and lower than that of the counter substrate 121. With such anadjustment of the refractive index, total reflection of light emittedfrom the EL layer 105 can be suppressed at the interface between theupper electrode layer 107 and the sealant 111 or the interface betweenthe sealant 111 and the counter substrate 121, so that light extractionefficiency can be improved.

Here, the level of a surface in the region where the upper electrodelayer 107 does not overlap with the lower electrode layer 103 is low, sothat the upper electrode layer 107 cannot be in contact with theauxiliary wiring 123 over the counter substrate 121 in some cases. Insuch a case, the connector 115 is provided over and in contact with theupper electrode layer 107 in the region, and thus, the upper electrodelayer 107 can be electrically connected to the auxiliary wiring 123through the connector 115 and conductivity of the upper electrode layer107 can be increased.

A material which electrically connects the upper electrode layer 107 andthe auxiliary wiring 123 can be used for the connector 115. For example,the connector 115 having conductivity be formed in such a manner that aconductive paste containing a conductive particle of silver, copper, orthe like is formed by a printing method such as a screen printingmethod, and then, is baked.

In addition, a material having an anisotropic conductive property in thedirection in which pressure is applied by thermocompression bonding inthe process of bonding the substrate 101 and the counter substrate 121,that is, the direction perpendicular to the substrate 101, may be usedfor the connector 115. When the connector 115 has such a property, theauxiliary wiring 123 in contact with the connector 115 can beelectrically connected to the upper electrode layer 107 owing toconductivity of the connector 115 in the direction perpendicular to thesubstrate 101.

Total reflection of light emitted from the EL element can be suppressedby the lens arrays 125 and 127 provided over the counter substrate 121,so that light emission can be effectively extracted. In this embodiment,the lens array 125 is provided over the surface of the counter substrate121, which does not face the substrate 101 because an extremely thinsubstrate such as a glass substrate is used as the counter substrate121; however, in the case where the counter substrate 121 is relativelythick, the counter substrate 121 is processed to have an uneven surfacewhich serves as the lens array 125. In addition, instead of the lensarrays 125 or 127, a hemispherical lens, a microlens array, a filmhaving uneven surface, a light diffusing film, or the like may beattached and used.

In addition, a structural body for diffusing light emitted from the ELelement, such as the lens array 125 or 127, is provided on thelight-emission side, and thus, a defect is repaired and a regionrecognized as a dark spot becomes inconspicuous by light which isemitted from another normal region and diffused by the lens arrays 125and 127.

It is preferable that the structural body provided over the countersubstrate 121 and for diffusing light emitted from the EL element, suchas the lens arrays 125 or 127 be provided so that focal surface of thestructural body with respect to visible light does not cross thelight-emitting element (or a defective portion in the EL element) whenseen from the counter substrate 121 side because when the EL elementemits light and is seen from the counter substrate 121 side, therepaired portion becomes inconspicuous without forming an image on therepaired portion, which is further effective. Particularly, when thestructural body for diffusing light emitted from the EL element has astructure in which two kinds of lens arrays which are different inshapes are stacked, the focal surfaces of the lens arrays can beseparated enough from the EL element; thus, the repaired portion fromwhich light emission can not be observed becomes more inconspicuous.

Here, a structural example in which a converter is connected to thelight-emitting device 100 is illustrated in FIG. 8A. The light-emittingdevice 100, a converter 128, and connection electrodes 129 a and 129 bare provided over the substrate 101. Input terminals of the converter128 are electrically connected to the connection electrodes 129 a and129 b for connecting to a power source for home use or the like. One oftwo output terminals of the converter 128 is electrically connected tothe main wiring 102 a of the light-emitting device 100 through a wiring131 a, and the other of the output terminals is electrically connectedto the main wiring 102 b through a wiring 131 b. Note that the wiring131 a is electrically connected to the main wiring 102 a through acontact hole, and the wiring 131 b is electrically connected to the mainwiring 102 b through a contact hole.

As the converter 128, an AC-DC converter for converting an alternatingcurrent voltage from a power source for home use or the like into adirect current voltage adjusted to an appropriate voltage for drivingthe light-emitting device 100 can be used. The converter 128 iselectrically connected to the main wirings 102 a and 102 b of thelight-emitting device 100 and supplies the converted direct currentvoltage to the light-emitting device 100 to drive the light-emittingdevice 100.

Further, a structure as illustrated in FIG. 8B may be employed in whicha pair of light-emitting devices 100 is provided over the substrate 101and the main wirings of the light-emitting devices 100 are connected inseries using external wirings (wirings 131 c, 131 d, and 131 e) so thatthe pair of light-emitting devices 100 is driven by one converter 128.The pair of light-emitting devices 100 is connected in series and thusan effective driving voltage in the entire device can be increased, sothat power conversion efficiency of the converter 128 can be improved ascompared to the case of using one light-emitting device. Note that twolight-emitting devices are connected in series here; however, three ormore light-emitting devices may be connected in series or a plurality oflight-emitting devices may be connected in parallel. Alternatively, aplurality of light-emitting devices may be connected in combination of aseries connection and a parallel connection. When a plurality oflight-emitting devices is connected to each other, the number ofconverters 128 with respect to one light-emitting device can be reduced,which is preferable.

The light-emitting device with the above structure can have highreliability with a potential drop due to the resistance of the upperelectrode of the EL element suppressed because conductivity of the upperelectrode of the EL element is increased by the auxiliary wiringprovided over the counter substrate. Further, the auxiliary wiring canbe easily formed over the counter substrate; thus, the structure issuitable for increasing the area of a light-emitting portion. Inaddition, the substrate where the EL element is provided and the countersubstrate may be bonded so that the auxiliary wiring provided over thecounter substrate is provided an inner side than at least a sealingregion and high positioning accuracy is not need; accordingly, thestructure is suitable for increasing the area of the substrate.

Next, another embodiment of a light-emitting device which is differentfrom the above will be described as an example.

In many cases, in an AC-DC converter for converting an alternatingcurrent voltage from a power source for home use into a direct currentvoltage for driving a light-emitting device, conversion efficiency tendsto be reduced as a voltage value after the conversion is smaller. Inview of the above, a plurality of light-emitting devices is connected inseries to increase an effective driving voltage as the entire device, sothat conversion efficiency of AC-DC converter can be improved.Hereinafter, embodiments of two kinds of light-emitting devices in eachof which a plurality of EL elements is connected in series will bedescribed.

Note that description of the common portions to those in thelight-emitting device 100 will be omitted here.

Modified Example 1

A light-emitting device 150 illustrated in FIGS. 2A and 2B is alight-emitting device in which four EL elements are connected in series.FIG. 2A is a schematic top view of the light-emitting device 150. FIG.2B is a schematic cross-sectional view taken along cutting line B-B′which is along the auxiliary wiring 123 in FIG. 2A. Note that only asubstrate, a counter substrate, a main wiring, a sub wiring, a lowerelectrode layer, and the auxiliary wiring are illustrated in FIG. 2A forsimplicity.

A main wiring 102 c is connected to a first lower electrode layer 103 a.In addition, a first EL layer 105 a and a first upper electrode layer107 a are formed over the first lower electrode layer 103 a to form afirst EL element.

Further, the first upper electrode layer 107 a is in contact with andelectrically connected to a first sub wiring 151 a.

The first sub wiring 151 a is in contact with and electrically connectedto a second lower electrode layer 103 b. In addition, a second EL layer105 b and a second upper electrode layer 107 b are formed over thesecond lower electrode layer 103 b to form a second EL element.

Thus, the first EL element is connected to the second EL element inseries through the first sub wiring 151 a. Similarly, the second ELelement is connected in series to a third EL element including a thirdlower electrode layer 103 c, a third EL layer 105 c, and a third upperelectrode layer 107 c, through a second sub wiring 151 b. In addition,the third EL element is connected in series to a fourth EL elementincluding a fourth lower electrode layer 103 d, a fourth EL layer 105 d,and a fourth upper electrode layer 107 d, through a third sub wiring 151c. In such a manner, all the four EL elements are connected in series.

Here, the fourth upper electrode layer 107 d is in contact with andelectrically connected to a main wiring 102 d.

The main wiring 102 c and the main wiring 102 d are led to an outer sidethan the counter substrate 121 and can be connected to an AC-DCconverter.

In addition, the auxiliary wiring 123 is formed over the countersubstrate 121 to be in contact with each the upper electrode layer, andthus, conductivity of the upper electrode layers is increased by theauxiliary wiring 123. The connector 115 having conductivity may beformed over the upper electrode layer as needed.

In the light-emitting device 150 with such a structure, a plurality ofEL elements is connected in series to increase an effective drivingvoltage, so that a decrease in conversion efficiency of an AC-DCconverter which is connected to the light-emitting device 150 can besuppressed; thus, the light-emitting device with lower power consumptioncan be provided. In addition, the auxiliary wiring provided over thecounter substrate increases conductivity of the upper electrode of theEL element, and thus, the light-emitting device in which a potentialdrop due to the resistance of the upper electrode is suppressed can beprovided.

Modified Example 2

A light-emitting device 160 illustrated in FIGS. 3A and 3B is alight-emitting device in which four EL elements are connected in series.FIG. 3A is a schematic top view of the light-emitting device 160. FIG.3B is a schematic cross-sectional view taken along cutting line C-C′which is along the auxiliary wiring 123 in FIG. 3A. Note that only asubstrate, a counter substrate, a main wiring, a lower electrode layer,and the auxiliary wiring are illustrated in FIG. 3A for simplicity.

A main wiring 102 e is connected to a first lower electrode layer 103 e.In addition, a first EL layer 105 e and a first upper electrode layer107 e are formed over the first lower electrode layer 103 e to form afirst EL element.

Further, the first upper electrode layer 107 e is in contact with andelectrically connected to a first lower electrode layer 103 f. Inaddition, a second EL layer 105 f and a second upper electrode layer 107f are formed over the second lower electrode layer 103 f to form asecond EL element.

Thus, the first EL element is connected to the second EL element inseries. Similarly, the second EL element is connected in series to athird EL element including a third lower electrode layer 103 g, a thirdEL layer 105 g, and a third upper electrode layer 107 g. In addition,the third EL element is connected in series to a fourth EL elementincluding a fourth lower electrode layer 103 h, a fourth EL layer 105 h,and a fourth upper electrode layer 107 h. In such a manner, all the fourEL elements are connected in series.

Here, the fourth upper electrode layer 107 h is in contact with andelectrically connected to a main wiring 102 f.

The main wiring 102 e and the main wiring 102 f are led to an outer sidethan the counter substrate 121 and can be connected to an AC-DCconverter.

In addition, the auxiliary wiring 123 is formed over the countersubstrate 121 to be in contact with each the upper electrode layer, andthus, conductivity of the upper electrode layers is increased by theauxiliary wiring 123. The connector 115 having conductivity may beformed over the upper electrode layer as needed.

In the light-emitting device 160 with such a structure, a plurality ofEL elements is connected in series to increase an effective drivingvoltage, so that a decrease in conversion efficiency of an AC-DCconverter which is connected to the light-emitting device 160 can besuppressed; thus, the light-emitting device with lower power consumptioncan be provided. In addition, the auxiliary wiring provided over thecounter substrate increases conductivity of the upper electrode of theEL element, and thus, the light-emitting device in which a potentialdrop due to the resistance of the upper electrode is suppressed can beprovided.

The light-emitting device with the above structure can be manufacturedby a manufacturing process of one embodiment of the present inventionwhich is described later. The light-emitting device manufactured throughthe above process can have high reliability in which an emission defectof the EL element is extremely reduced. Further, the manufacturingprocess including steps of detecting and repairing a defective portioncan be easily employed when the area of the light-emitting portion isincreased, and thus, is suitable for increasing the area of thelight-emitting portion. Furthermore, an uneven structural body such as alens array is formed on the light-emission side to diffuse lightemission, whereby a defective portion becomes inconspicuous.

<Material and Manufacturing Method>

Here, materials which can be used for the structures and a manufacturingmethod of the materials will be described. Note that materials are notlimited to one described below, and a material having a similar functioncan be used as appropriate.

[Substrate]

As the material of the substrate provided on the light-emission side, amaterial with a light-transmitting property, such as glass, quartz, oran organic resin can be used. As the material of the substrate providedon the opposite side of the light-emission side, a light-transmittingproperty is not always necessary, and a material such as a metal, asemiconductor, ceramics, and a colored organic resin can be used otherthan the above materials. In the case where a conductive substrate isused, the substrate preferably has an insulating property by oxidationof its surface or formation of an insulating film over the surface.

As a method by which a surface of a conductive substrate such as a metalsubstrate or an alloy substrate is insulated, an anodic oxidationmethod, an electrodeposition method, or the like can be used. In thecase where an aluminum substrate is used as the substrate, for example,aluminum oxide formed over the surface by an anodic oxidation method hasa high insulating property and the aluminum oxide layer can be formedthin, which is preferable. In addition, an organic resin such as apolyamide-imide resin, or an epoxy resin can be formed over thesubstrate surface by an electrodeposition method. Such an organic resinhas a high insulating property and flexibility; thus, a crack hardlyoccurs in the surface even when the substrate is bent. In addition, whena material with high heat resistance is used, deformation of thesubstrate surface due to heat generated at the time of driving thelight-emitting device can be suppressed.

In the case where an organic resin is used for the substrates, forexample, any of the following can be used as the organic resin:polyester resins such as polyethylene terephthalate (PET) andpolyethylene naphthalate (PEN), a polyacrylonitrile resin, a polyimideresin, a polymethylmethacrylate resin, a polycarbonate (PC) resin, apolyethersulfone (PES) resin, a polyamide resin, a cycloolefin resin, apolystyrene resin, a polyamide imide resin, a polyvinylchloride resin,and the like. Further, a substrate in which a glass fiber is impregnatedwith an organic resin or a substrate in which an inorganic filler ismixed with an organic resin can also be used.

In particular, in the case of a top-emission light-emitting device, asthe substrate on the opposite side of the light-emission side where anEL element is formed, a high-thermal-conductive substrate such as ametal substrate or an alloy substrate is preferably used. In the case ofa large lighting device including an EL element, heat from the ELelement becomes a problem in some cases; therefore, heat dissipation canbe increased with the use of such a substrate having high thermalconductivity. For example, when a substrate of aluminum oxide,duralumin, or the like is used other than a stainless steel substrate,reduction in weight and high thermal dissipation can be achieved. When astack of aluminum and aluminum oxide, a stack of duralumin and aluminumoxide, a stack of duralumin and magnesium oxide, or the like is used,the surface of the substrate can have an insulating property, which ispreferable.

[Light-Emitting Element]

As a light-transmitting material which can be used for an electrodelayer through which light is extracted, indium oxide, indium tin oxide(ITO), indium zinc oxide, zinc oxide, zinc oxide to which gallium isadded, graphene, or the like can be used.

Alternatively, for the electrode layer, a metal material such as gold,silver, platinum, magnesium, nickel, tungsten, chromium, molybdenum,iron, cobalt, copper, palladium, or titanium, or an alloy of any ofthese metal materials can be used. Further, a nitride of the metalmaterial (such as titanium nitride) or the like may be used. In the caseof using the metal material (or the nitride thereof), the electrodelayer may be thinned so as to be able to transmit light.

Further, a stacked film of any of the above materials can be used as theelectrode layer. For example, when a stacked film of ITO and an alloy ofsilver and magnesium is used, conductivity can be increased, which ispreferable.

The thickness of the electrode layer through which light is extractedis, for example, greater than or equal to 50 nm and less than or equalto 300 nm, preferably greater than or equal to 80 nm and less than orequal to 130 nm, further preferably greater than or equal to 100 nm andless than or equal to 110 nm.

An EL layer includes at least a layer containing a light-emittingorganic compound. In addition, the EL layer can have a stacked-layerstructure in which a layer containing a substance having a highelectron-transport property, a layer containing a substance having ahigh hole-transport property, a layer containing a substance having ahigh electron-injection property, a layer containing a substance havinga high hole-injection property, a layer containing a bipolar substance(substance having a high electron-transport property and a highhole-transport property), and the like are combined as appropriate.

Note that in an embodiment of the present invention, a light-emittingelement (tandem light-emitting element) in which a plurality of ELlayers are provided between an upper electrode layer and a lowerelectrode layer can be used. A stacked-layer structure of two layers,three layers, or four layers (in particular, a stacked-layer structureof three layers) is preferably used. In addition, an intermediate layercontaining a substance having a high electron-transport property, asubstance having a high hole-transport property, or the like can beincluded between these EL layers. Examples of structures of the EL layerwill be described in detail in Embodiment 3.

An electrode layer which is provided on the side opposite to the sidefrom which light is extracted is formed using a reflective material. Asthe reflective material, a metal material such as aluminum, gold,platinum, silver, nickel, tungsten, chromium, molybdenum, iron, cobalt,copper, or palladium can be used. In addition, any of the following canbe used: alloys containing aluminum (aluminum alloys) such as an alloyof aluminum and titanium, an alloy of aluminum and nickel, and an alloyof aluminum and neodymium; and alloys containing silver such as an alloyof silver and copper and an alloy of silver and magnesium. An alloy ofsilver and copper is preferable because of its high heat resistance.Further, a metal film or a metal oxide film is stacked on an aluminumalloy film, whereby oxidation of the aluminum alloy film can beprevented. As examples of a material for the metal film or the metaloxide film, titanium, titanium oxide, and the like are given. Aluminumcan also be used for the material of the electrode layer; however, inthat case, the wiring might be corroded when the wiring is provided tobe in direct contact with ITO or the like. Therefore, it is preferablethat the electrode layer have a stacked-layer structure and thataluminum be used for a layer which is not in contact with ITO or thelike.

Note that a conductive film used for the light-emitting element can beformed by a film formation method such as an evaporation method, asputtering method, a CVD method, or the like. In addition, the EL layercan be formed by a film formation method such as an evaporation methodor an ink-jet method.

[Planarization Film]

As a material of the planarization film, for example, an organic resinsuch as polyimide, acrylic, polyamide, or epoxy or an inorganicinsulating material can be used. For example, the planarization film ispreferably formed in such a manner that a photosensitive organic resinis applied by a spin coating method, or the like, and then is subjectedto selective light exposure and development. As another formationmethod, a sputtering method, an evaporation method, a dropletdischarging method (e.g., an inkjet method), a printing method (e.g., ascreen printing method or an offset printing method), or the like may beused.

[Main Wiring and Auxiliary Wiring]

In the case of forming the main wiring and the auxiliary wiring by aprinting method such as a screen printing method, a conductive paste inwhich conductive particles having a diameter of several nanometers toseveral tens of micrometers are dissolved or dispersed in an organicresin is selectively printed. As the conductive particles, metalparticles of one or more of silver (Ag), gold (Au), copper (Cu), nickel(Ni), platinum (Pt), palladium (Pd), tantalum (Ta), molybdenum (Mo),titanium (Ti) and the like, fine particles of silver halide, ordispersible nanoparticles can be used. In addition, as the organic resinincluded in the conductive paste, one or more selected from organicresins serving as a binder of metal particles, a solvent, a dispersingagent and a coating material can be used. Organic resins such as anepoxy resin or a silicone resin can be given as representative examples.Further, in forming the conductive layer, baking is preferably performedafter the conductive paste is printed.

In addition, in the case where a conductive film is formed by a filmformation method such as a sputtering method or a CVD method and then isselectively etched, a conductive material which is used for thelight-emitting element can be used for the conductive film, asappropriate. Alternatively, the main wiring and the auxiliary wiring maybe formed by a plating method.

[Sealing Material]

A known material can be used for the sealing material. For example, athermosetting material or a UV curable material may be used.Alternatively, an epoxy resin of a two-component-mixture type may beused. A material capable of bonding inorganic materials, organicmaterials, or an inorganic material and an organic material may be usedin accordance with an adhesion site. Further, it is desirable that amaterial for the sealing material allow as little moisture and oxygen aspossible to penetrate through.

Note that a drying agent may be contained in the sealing material. Forexample, a substance which absorbs moisture by chemical adsorption, suchas an oxide of an alkaline earth metal (e.g., calcium oxide or bariumoxide), can be used. Alternatively, a substance which adsorbs moistureby physical adsorption, such as zeolite or silica gel, may be used asthe drying agent.

The sealing material can be formed by a printing method such as a screenprinting method or an ink-jet method or an application method such as adispenser method.

[Sealant]

As the sealant, an inorganic material, an organic material, or acombination thereof which have light-transmitting properties withrespect to light emitted from the EL element can be used, or a stack ofthese materials can be used as appropriate. Further, it is preferablethat a refractive index of the sealant to the light emission be adjustedas described above. In addition, it is preferable that a material usedfor the sealant allow as little moisture and oxygen as possible topenetrate through, similar to the sealing material. The same materialmay be used for the sealant and the sealing material.

Further, the sealant can be formed by a film formation method such as asputtering method or a CVD method, or a printing method or anapplication method as in the sealing material.

[Connector]

A conductive paste or the like containing conductive particles such assilver or copper can be used for the connector. By baking the conductivepaste, the connector can have conductivity.

Alternatively, a thermosetting resin with which conductive metalparticles are mixed may be used for the connector. As the metalparticles, particles in which two or more kinds of metals are layered,for example, Ni particle which is covered with Au is preferably used.Diameter of the metal particle is greater than or equal to 100 nm andless than or equal to 100 μm, preferably greater than or equal to 1 μmand less than or equal to 50 μm. A paste material or a sheet materialcan be used for the connector.

The connector formed using such a material is provided betweenelectrodes and the material and the electrode are applied with pressureand bonded while being heated, and thus, the metal particles are incontact with each other in the pressure direction. In this manner, aconductive path is formed. On the other hand, an insulating property ismaintained by the resin in a direction perpendicular to the pressuredirection. As a result, an anisotropic conductive property is exhibited.

The connector can be formed by a printing method or an applicationmethod, similar to the sealing material. In addition, in the case wherea sheet material is used for the connector, the material can be directlybonded to a desired position.

This embodiment can be combined with any of the other embodiments inthis specification as appropriate.

Embodiment 2

In this embodiment, an example of a method for manufacturing thelight-emitting device 100 described as an example in Embodiment 1 willbe described with reference to FIGS. 4A to 4C, FIGS. 5A and 5B, FIGS. 9Aand 9B, FIGS. 10A to 10C, FIG. 11, and FIG. 12.

First, the main wirings 102 a and 102 b and the planarization film 109are formed over the substrate 101.

As the substrate 101, any of the materials described in Embodiment 1 canbe used. In this embodiment, an aluminum substrate which is subjected tosurface oxidation treatment and whose surface is insulated is used asthe substrate 101.

The main wirings 102 a and 102 b are formed over the substrate 101 bythe method described in Embodiment 1 as an example. In this embodiment,the main wirings 102 a and 102 b are formed using a material containingcopper by a screen printing method.

The planarization film 109 is formed to cover the exposed surface of thesubstrate 101 and the main wirings 102 a and 102 b. A photosensitiveorganic resin is applied by a spin coating method, and then, isselectively exposed to light and is subjected to development treatment,so that the planarization film 109 having opening portions overlappingwith the main wirings 102 a and 102 b can be formed.

Note that the exposed portion of the substrate 101 can be covered by theplanarization film 109, so that a planarized surface can be obtained.Thus, when the substrate 101 has an uneven surface, an influence of theuneven surface can be suppressed, which is preferable.

Note that FIG. 4A illustrates a schematic cross-sectional view at thisstage.

Next, the lower electrode layer 103 which is electrically connected tothe main wiring 102 b is formed.

The lower electrode layer 103 is formed using a material described as anexample in Embodiment 1 by a film formation method such as a sputteringmethod. In this embodiment, as a conductive film forming the lowerelectrode layer 103, a film in which a titanium film and a titaniumoxide film are stacked over an aluminum film is used. When aluminumwhich has low resistance is used for a layer lower than the titaniumfilm, wiring resistance can be reduced. In addition, since the titaniumfilm is formed over the lower layer, the aluminum film is not exposedand corrosion can be suppressed. Further, since a titanium oxide film isused as a layer in contact with the EL layer 105, the lower electrodelayer 103 and the EL layer 105 can have an ohmic contact.

In particular, in the case where a film containing a transition metaloxide such as molybdenum oxide with a hole-injection property and ahole-transport property is used as the lowermost layer of the EL layer105 which is in contact with the lower electrode layer 103 and atitanium oxide film is used as the outermost layer of the lowerelectrode layer 103 which is in contact with the film containing atransition metal oxide, contact resistance between the films can beextremely reduced, which is preferable. On the other hand, aluminumoxide or the like has an insulating property and thus the contactresistance is increased.

An end portion of the lower electrode layer 103 is preferably tapered asgentle as possible. As needed, an organic insulating film may be formedto cover the end portion to prevent disconnection caused when a step ofthe end portion of the lower electrode layer 103 cannot be covered withthe EL layer 105 and the upper electrode layer 107. In this case, it ispreferable that the organic insulating film do not overlap with theauxiliary wiring 123.

Next, the EL layer 105 is formed to cover the lower electrode layer 103by an evaporation method. The EL layer 105 is preferably formed by usinga blocking mask (also referred to as a metal mask) so that the EL layer105 is not formed in a region where a film formation is not needed.

Further, the upper electrode layer 107 covering the EL layer 105 andelectrically connected to the main wiring 102 a is formed. In thisembodiment, ITO is used for a conductive film forming the upperelectrode layer 107 by a sputtering method.

FIG. 4B illustrates a schematic cross-sectional view at this stage.

Here, a step of providing the auxiliary wiring 123 to the countersubstrate 121 will be described.

A substrate formed using the material described as an example inEmbodiment 1 can be used as the counter substrate 121. In thisembodiment, a glass substrate with a thickness of 50 μm is used.

The auxiliary wiring 123 is formed over a surface of the countersubstrate 121, which faces the substrate 101. In this embodiment, theauxiliary wiring 123 is formed by an electroless plating method. First,a thin conductive film serving as a seed layer is formed by a sputteringmethod, and then, a pattern is formed by a known photolithography step.Then, a copper wiring is formed using the seed layer as a nucleus by anelectroless plating method.

When a copper wiring which has low resistance is used as the auxiliarywiring 123, conductivity of the upper electrode layer 107 can be moreeffectively increased, so that a potential drop due to the resistance ofthe upper electrode layer 107 can be suppressed.

FIG. 4C illustrates a cross-sectional schematic view of the countersubstrate 121 at this stage.

Next, a step of bonding the substrate 101 and the counter substrate 121will be described.

First, the connector 115, the sealant 111, and the sealing material 113are formed over the substrate 101. In this embodiment, each of theconnector 115, the sealant 111, and the sealing material 113 is formedby a screen printing method. In addition, a material which exhibits ananisotropic conductive property by a pressure-bonding process performedlater is used for the connector 115 in this embodiment.

The substrate 101 is bonded to the counter substrate 121, and then, issubjected to vacuum-pressure-bonding while being heated in a reducedpressure. Through this process, the sealant 111 and the sealing material113 are cured by heating; thus, the substrate 101 is attached to thecounter substrate 121.

At this time, the thicknesses of the sealing material 113 and thesealant 111, the pressure in the pressure-bonding process, and the likeare adjusted as appropriate so that an edge portion of the auxiliarywiring 123 is physically in contact with and is electrically connectedto the upper electrode layer 107.

Further, through the pressure-bonding process, the connector 115exhibits an anisotropic conductive property owing to heat and pressure,so that the upper electrode layer 107 and the auxiliary wiring 123 whichare in contact with the connector 115 are electrically connected to eachother.

FIG. 5A illustrates a schematic cross-sectional view at this stage.

After the bonding is performed, the lens arrays 125 and 127 are formedover the surface of the counter substrate 121, which does not face thesubstrate 101. The lens arrays 125 and 127 can be formed by attaching asheet on which lens arrays are formed. The sheet is preferably formedusing a material with a high refractive index.

FIG. 5B illustrates a schematic cross-sectional view at this stage. Notethat FIG. 5B is the same view as FIG. 1B.

Through the above-described process, the light-emitting device 100 canbe manufactured. In the light-emitting device 100 manufactured throughthis process, a potential drop due to the resistance of the upperelectrode is suppressed and reliability is high because the auxiliarywiring for increasing conductivity of the upper electrode layer of theEL element is formed without damaging the EL element. In addition, inthis manufacturing method, the counter substrate may be bonded so thatthe auxiliary wiring provided over the counter substrate is provided aninner side than at least a sealing region, in which high positioningaccuracy is not need; accordingly, the structure is suitable forincreasing the area of the substrate.

Modification Example

When an EL element is formed, as a method for stacking a layercontaining a light-emitting organic compound and an upper electrode inthis order over a lower electrode formed over a substrate having aninsulating surface, a vacuum evaporation method is given, for example.As a method for forming an island-shaped layer using a vacuumevaporation method, a method using a metal mask (also referred to asblocking mask or shadow mask), which is a metal plate provided with anopening, is known. The metal mask is provided between a substrate and anevaporation source to be in contact with the substrate, and evaporationis performed on the substrate through the opening in the metal mask,whereby a pattern of a shape in accordance with the shape of the openingcan be formed.

However, when dust (including a small foreign substance referred to as aparticle) attached to the metal mask, the inner wall of a vacuumevaporation apparatus, and the like is attached to the substrate, alight-emission defect such as a dark spot where light emission is notobtained due to a short-circuited EL element, a luminescent spot whereluminance is higher than another normal region and which is caused bycurrent concentration in the periphery of the spot, and the like mightbe caused. For example, when there is even one short-circuited portionin a light-emitting portion, the whole light-emitting portion does notemit light in some cases or luminance of the whole light-emittingportion might be decreased. When the area of light-emitting portion isincreased, in particular, the probability of occurrence of suchmalfunctions is considerably increased.

In addition, in a light-emitting device in which an EL element isemployed, a structural body needs to be provided in an upper portionthan an upper electrode of the EL element. For example, in alight-emitting device in which a top-emission EL element is employed,unevenness is formed over a surface of a counter substrate in order tosuppress total reflection of light emitted from the EL element, andthus, light extraction efficiency is improved. In addition, an auxiliaryelectrode (also referred to as auxiliary wiring) for increasingconductivity of the upper electrode may be provided on and in contactwith the upper electrode of the EL element.

Accordingly, even if a light-emission defect of the EL element isrecognized at the time of driving the light-emitting device in which theEL element is employed, the defective portion is hardly detected andrepaired because of the structural body provided in an upper portionthan the upper electrode of the EL element.

In view of the above, a method for manufacturing a light-emitting devicein which a light-emission defect of an EL element is suppressed andreliability is high will be described.

Note that a description that overlaps with the portions described in theabove is omitted or is simply given.

First, the main wirings 102 a and 102 b and the planarization film 109are formed over the substrate 101. Then, the lower electrode layer 103which is electrically connected to the main wiring 102 b is formed. Themain wirings 102 a and 102 b, the planarization film 109, and the lowerelectrode layer 103 can be formed by a method similar to the abovedescribed method.

FIG. 9A illustrates a schematic cross-sectional view at this stage. Inaddition, FIG. 11 illustrates a schematic top view at this stage.

In FIG. 9A and FIG. 11, foreign substances 171 a and 171 b are attachedon the lower electrode layer 103. Here, FIG. 9A corresponds to aschematic cross-sectional view taken along cutting line D-D′ across theforeign substances 171 a and 171 b in FIG. 11. The reason why theforeign substances 171 a and 171 b are attached is that a foreignsubstance attached on the inner wall of a film formation apparatus forforming the lower electrode layer 103, the EL layer 105, and the like, ablocking mask (also referred to as metal mask) used in the filmformation, and the like, for example, is attached to the substrate 101.

Hereinafter, the case in which the foreign substances 171 a and 171 bare attached onto the lower electrode layer 103 and thus a defect regionis formed in the light-emitting element in a later process will bedescribed.

Next, the EL layer 105 is formed to cover the lower electrode layer 103by an evaporation method in a manner similar to the above method.Further, the upper electrode layer 107 covering the EL layer 105 andelectrically connected to the main wiring 102 a is formed.

FIG. 9B illustrates a schematic cross-sectional view at this stage.

In FIG. 9B, the EL layer 105 is formed thin in a region 117 a. Asdescribed below, the EL layer 105 is formed by stacking a plurality offilms successively, and in the case where the foreign substance 171 amoves or disappears in the film formation, for example, the EL layer 105is formed thin in some cases, as illustrated in FIG. 9B.

Note that in the region 117 a where the EL layer 105 is formed thin,electrical resistance in the film thickness direction is smaller thanthat in another normal region; thus, current is concentrated when avoltage is applied between the upper electrode and the lower electrodeof the EL element, and in most cases, a luminescent spot where luminanceis higher than that in another normal region occurs, which is recognizedas a defect.

In addition, the foreign substance 171 b remains in the film in theregion 117 b. In such a region, the upper electrode layer 107 and thelower electrode layer 103 are electrically short-circuited when theforeign substance 171 b has conductivity or when the upper electrodelayer 107 and the lower electrode layer 103 are in contact with eachother in the periphery of the foreign substance 171 b, so that a darkspot where light emission can not be obtained occurs, which isrecognized as a defect. On the other hand, when the foreign substance171 b has insulating property and the upper electrode layer 107 and thelower electrode layer 103 are not in contact with each other in theperiphery of the foreign substance 171 b, the EL element is insulated inthe periphery of the foreign substance 171 b, so that a dark spotoccurs, which is recognized as a defect as in the case of the shortcircuit. Note that in the case where a dark spot occurs due to the shortcircuit, depending on the electrical resistance of the short-circuitedportion in the film thickness direction, the whole light-emittingportion does not emit light in some cases or whole luminance of thelight-emitting portion might be decreased.

As another defect other than the above, for example, a defect causedwhen the upper electrode layer 107 is not formed and thus the EL elementis insulated, a defect caused when both the EL layer 105 and the upperelectrode layer 107 are not formed and the EL element is insulated, andthe like can be given. Other than a defect due to a foreign substance,there is a defect in which the EL element is short-circuited orinsulated due to a scratch made by contact between an edge of an openingof the metal mask which is used in the formation of the EL layer 105,the upper electrode layer 107, and the like and the lower layer.

In addition, a potential defect in which a luminescent spot whereluminance intensity is higher than that in another normal region is notrecognized because the EL layer 105 becomes relatively thin and isincompletely short circuited can be given.

In order to detect such defective portions, a voltage is applied betweenthe main wiring 102 a and the main wiring 102 b so that the EL elementemits light at the stage after the EL layer 105 and the upper electrodelayer 107 are formed. In the case where the defective portion isdetected, the defective portion is recognized as a light-emission defectsuch as a luminescent spot or a dark spot, or as a phenomenon in whichthe whole light-emitting portion does not emit light.

Here, since the main wirings 102 a and 102 b are led to the outerregions of the substrate 101, when a voltage is applied to the ELelement with the use of an external power source or the like, the mainwirings 102 a and 102 b can be easily connected to a terminal input tothe external power source. In addition, the main wirings 102 a and 102 band the terminal can be connected in a region far enough from the ELelement; thus, a malfunction such that the element is broken by contactbetween the terminal and the EL element can be suppressed.

In order to detect a defective portion, an observation method such as anobservation by the human eye, an optical microscope, or an image-sensingdevice by which visible light or infrared light can be observed can beemployed. Even when it is difficult to observe by the human eye, heatproduction might be increased in a region where large current flows;thus, observation of infrared light generated by the heat is alsoeffective. In particular, the potential defect described above hashigher current value than another normal region and is thus is easilydetected by observation of infrared light.

In addition, it is preferable that current value of the voltage appliedto the EL element at the time of emitting light from the EL element bemeasured. At this time, in the case where the measured current value ishigher than the assumed current value, there is high possibility thatsomewhere in the light-emitting portion is short-circuited or the ELlayer 105 has a thin portion, so that the presence or absence of adefect can be easily determined. In particular, in the case where thereis the potential defect as described above, it is difficult to determinethe presence or absence of the defect by luminance difference due tovisible light; thus, it is effective to determine the presence orabsence of a defect from the measured current value.

A defective portion is detected in this manner, and then, the defectiveportion is irradiated with laser light to be repaired. Specifically, aregion where the defect occurs, in the upper electrode layer 107, twolayers of the upper electrode layer 107 and the EL layer 105, or threelayers of the upper electrode layer 107, the EL layer 105, and the lowerelectrode layer 103 is removed and insulated by irradiation with laserlight.

FIG. 10A illustrate a schematic view according to the step ofirradiating with a laser light 173. The defective portion detected bythe above observation method is selectively irradiated with the laserlight 173.

A laser including light with a wavelength that is absorbed by at least amaterial used for any of the upper electrode layer 107, the EL layer105, and the lower electrode layer 103 is used as the laser light 173.For example, it is possible to use light emitted from one or more of agas laser such as an Ar laser, a Kr laser, or an excimer laser; or asolid-state laser such as a laser using, as a medium, single crystallineYAG, YVO₄, forsterite (Mg₂SiO₄), YAlO₃, or GdVO₄, or polycrystalline(ceramic) YAG, Y₂O₃, YVO₄, YAlO₃, or GdVO₄, to which one or more of Nd,Yb, Cr, Ti, Ho, Er, Tm, or Ta is added as a dopant, a glass laser, aruby laser, an alexandrite laser, a Ti:sapphire laser, or a fiber laser.Alternatively, a second harmonic or a third harmonic oscillated from theabove-described solid-state laser, and a higher harmonics can be used.Note that, when a solid-state laser whose laser medium is solid is used,there are advantages in that a maintenance-free condition can bemaintained for a long time and output of the laser light is relativelystable. A short time pulsed laser such as nanosecond, picosecond, andfemtosecond is appropriate for this process. With the short time pulsedlaser, a high-density energy which causes a multiphoton absorptionphenomenon can be applied to a defective portion of a light-emittingelement.

Irradiation with the laser light 173 makes it possible to remove thedefective portion at least in the upper electrode layer 107. Note thatdepending on the wavelength or the energy density of the used laserlight 173, the EL layer 105 or both the EL layer 105 and the lowerelectrode layer 103 are also removed at the same time as the upperelectrode layer 107.

Here, an example of a structure of detecting a defective portion of anEL element and irradiating with laser light will be described withreference to FIG. 12. In this structure, current flowing through the ELelement is measured while applying a voltage to the EL element providedover a substrate, and at the same time, a defective portion is detectedby observing light emitted from the EL element by an emissionmicroscope, and then, the defective portion is irradiated with laserlight to be repaired.

Note that an EL element 203 and a main wiring 207 provided over asubstrate 201 are schematically illustrated in FIG. 12 for simplicity;actually, there are two kinds of main wirings, and each of the mainwirings is electrically connected to an upper electrode layer or a lowerelectrode layer of the EL element 203. Further, there is a defectiveportion 205 in a region of the EL element 203.

The substrate 201 over which the EL element 203 is formed is providedover a stage 215. In addition, the main wiring 207 provided over thesubstrate 201 is electrically connected to an external power source 211through a source meter 213. Accordingly, the EL element 203 formed overthe substrate 201 can emit light by the external power source 211. Atthis time, value of current flowing through the EL element 203 ismeasured by the source meter 213.

An emission microscope 225 includes a camera 219, an image processingmechanism 221, and a display device 223. The number of photons in lightemitted from the EL element 203 can be observed using the camera 219included in the emission microscope 225, and the result can be output tothe display device 223 through the image processing mechanism 221.

An optical microscope including a super-sensitive high-definition camera(photon-counting camera) can be included in the camera 219. The lightemission detected here is input to the image processing mechanism 221 asan image signal, subjected to image processing, and displayed on thedisplay device 223. At this time, the image of the detected lightemission is overlapped with a pattern image over the substrate 201 whichis photographed in advance, so that a light emission portion can bedetected. For example, on the display device 223, distribution of thenumber of photons of the defective portion 205 in the EL element 203 isdisplayed by colors; thus, a portion which is displayed by a colordifferent from that of another normal region is observed as thedefective portion 205 and the position of the defective portion 205 canbe detected.

In the case of a light-emission defect which can be detected by visiblelight such as a luminescent spot or a dark spot, the defective portion205 can be detected by detecting the number of photons of light emissionin the visible-light region.

It is generally known that when leakage current is caused by a shortcircuit between electrodes, light emission of continuous spectrum in awide range from visible light to infrared light is detected. In the caseof the super-sensitive high-definition camera (photon-counting camera)used in the present invention, observation is performed utilizing thephenomenon in which a crystal containing Si transmits infrared lighthaving a wavelength longer than a wavelength corresponding to the bandgap energy of crystal, and thus, can detect a defective portion due to ashort circuit.

The emission microscope 225 is connected to a position alignmentmechanism 217 for moving the stage 215 and detects the position of adefective portion by observing a light emission 209 while the stage 215is moved. In addition, the position alignment mechanism 217 moves thestage 215 to the detected position so that the defective portion 205 isirradiated with laser light based on data of the defective portion 205.

A laser device 233 can oscillate the laser light 173 with which thedefective portion 205 is irradiated and the defective portion 205 isinsulated.

Next, a method for repairing the defective portion 205 by laserirradiation after the position of the defective portion 205 is detectedwith the above structure will be described.

First, a voltage is applied between the upper electrode and the lowerelectrode of the EL element 203 through the main wiring 207 from theexternal power source 211 to make the EL element 203 emit light. At thistime, current flowing through the EL element 203 is measured by thesource meter 213.

The light emission 209 from the EL element 203 is detected by the camera219 in the emission microscope 225 through a condenser lens 227, a halfmirror 229, and a shutter 231 a when the shutter 231 a is opened, andthe detected result is displayed on the display device 223 through theimage processing mechanism 221. At this time, a shutter 231 b is closed.

The position of the defective portion 205 is detected by the lightemission 209, and then, the stage 215 is moved by the position alignmentmechanism 217 so that the defective portion 205 is irradiated with laserlight.

Then, the shutter 231 a is closed and the shutter 231 b is opened tooscillate the laser light 173 from the laser device 233. The defectiveportion 205 over the substrate 201 is irradiated with the laser light173 through the half mirror 229 and the condenser lens 227.

In this manner, the defective portion 205 whose position is detected isirradiated with the laser light 173, so that the defective portion 205can be repaired.

In addition, current flowing through the EL element 203 is measuredagain by the source meter 213 after the irradiation with the laser light173. By comparing current before the irradiation and current after theirradiation, it is found whether a defect is properly repaired or not.

Note that as a method for insulating the defective portion 205 byirradiation with the laser light 173, there are a method in which amaterial of the upper electrode layer or the lower electrode layer isirradiated with the laser light 173 and is oxidized and thus thedefective portion 205 is insulated, a method in which the defectiveportion 205 is physically separated by irradiation with the laser light173 and thus is insulated, and the like. In one embodiment of thepresent invention, both the above methods for insulation can beperformed by adjusting output of the laser light 173.

In addition, in the case of irradiation with the laser light 173,adjustments of output and irradiation time of the laser light 173 areneeded so that influence of the irradiation to the periphery such as abreak of a normal region other than the defective portion 205 is reducedas much as possible. The beam diameter of the laser light 173 in oneembodiment of the present invention is preferably larger than thediameter of the defective portion 205 irradiated with the laser light173, specifically, the diameter of 1.0 μm to 3.0 μm is preferable. Inthe case where the diameter of the defective portion 205 is larger thanthe beam diameter, irradiation with the laser light 173 is performedplural times while the stage 215 is moved.

The above is the description of the structure and the method fordetecting a defective portion of an EL element and irradiating withlaser light, as an example.

FIG. 10B is a schematic cross-sectional view at the stage afterirradiation with the laser light 173 in this manner.

In the regions 119 a and 119 b where light-emission defects arerepaired, the upper electrode layer 107, the EL layer 105, and the lowerelectrode layer 103 are partly removed by irradiation with the laserlight 173. Accordingly, in the regions 119 a and 119 b, the upperelectrode layer 107 is electrically separated and insulated from thelower electrode layer 103. Thus, the regions 119 a and 119 b areobserved as dark spots from which light emission cannot be obtained evenwhen a voltage is applied between the upper electrode and the lowerelectrode of the EL element.

Here, after the irradiation with the laser light 173 is completed, avoltage is preferably applied again to the main wirings 102 a and 102 bso that the EL element emits light, whereby it is verified whether thedefective portion remains or not. Further, it is particularly preferablethat current of the voltage applied to the main wirings 102 a and 102 bbe measured and compared to an assumed current value in order to verifywhether or not the defective portion is completely repaired in theentire light-emitting portion.

Here, in the case where the defect remains, the defective portion isdetected and is repaired by irradiation with the laser light 173 again.

Note that detect of the defective portion and irradiation with the laserlight 173 are preferably performed in an atmosphere containing animpurity such as water and oxygen as little as possible. For example,they are performed in a reduced-pressure atmosphere or an inert gasatmosphere such as a nitrogen atmosphere or a rare gas atmosphere.

Further, after the upper electrode layer 107 is formed and then abarrier film formed of an insulator which does not transmit an impuritysuch as water and oxygen is formed, detect of the defective portion andirradiation with the laser light 173 may be performed. A material havinga light-transmitting property with respect to light emitted from the ELelement is used for the barrier film.

Through the above, the process of detecting and repairing a defectiveportion is completed.

Next, the counter substrate 121 over which the auxiliary wiring 123 isformed is bonded to the substrate 101 by the above method.

Then, the lens arrays 125 and 127 are formed over the surface of thecounter substrate 121 not facing the substrate 101.

FIG. 10C illustrates a schematic cross-sectional view at this stage.

The lens arrays 125 and 127 are provided on the light-emission side, andthus, a defect is repaired and a region recognized as a dark spotbecomes inconspicuous by light which is emitted from another normalregion and diffused by the lens arrays 125 and 127.

It is preferable that the lens arrays 125 and 127 be provided so thatfocal surfaces of the lens arrays 125 and 127 with respect to visiblelight does not cross the EL element (or a defective portion in the ELelement) when seen from the counter substrate 121 side because when theEL element emits light and is seen from the counter substrate 121 side,the repaired portion becomes inconspicuous without forming an image onthe repaired portion, which is further effective. Particularly, when thelens array has a structure in which two kinds of lens arrays which aredifferent in shapes are stacked, the focal surfaces of the lens arrayscan be separated enough from the EL element; thus, the repaired portionfrom which light emission can not be observed becomes moreinconspicuous.

Through the above process, the light-emitting device 100 can bemanufactured. The light-emitting device 100 manufactured through theabove process can have high reliability in which a light-emission defectof the EL element is extremely reduced. Further, the manufacturingprocess including the process of detecting and repairing the defectiveportion can be easily employed when the area of the light-emittingportion is increased, and thus, is suitable for increasing the area ofthe light-emitting portion. Furthermore, an uneven structural body suchas a lens array is formed on the light-emission side to diffuse lightemission, whereby the repaired portion of the defective portion becomesinconspicuous.

This embodiment can be combined with any of the other embodimentsdisclosed in this specification as appropriate.

Embodiment 3

In this embodiment, an example of an EL layer which can be applied toone embodiment of the present invention will be described with referenceto FIGS. 6A to 6C.

As illustrated in FIG. 6A, the EL layer 105 is provided between thelower electrode layer 103 and the upper electrode layer 107. The lowerelectrode layer 103 and the upper electrode layer 107 can havestructures similar to the lower electrode layer and the upper electrodelayer described as an example in the above embodiments.

A light-emitting element including the EL layer 105 described as anexample in this embodiment can be used in any of the light-emittingdevices described as examples in the above embodiments.

The EL layer 105 includes at least a light-emitting layer containing alight-emitting organic compound. In addition, the EL layer 105 can havea stacked-layer structure in which a layer containing a substance havinga high electron-transport property, a layer containing a substancehaving a high hole-transport property, a layer containing a substancehaving a high electron-injection property, a layer containing asubstance having a high hole-injection property, a layer containing abipolar substance (substance having a high electron-transport propertyand a high hole-transport property), and the like are combined asappropriate. In this embodiment, in the EL layer 105, a hole-injectionlayer 701, a hole-transport layer 702, a layer 703 containing alight-emitting organic compound, an electron-transport layer 704, and anelectron-injection layer 705 are stacked in this order from the lowerelectrode layer 103 side. Note that the stacking order may be inversed.

A manufacturing method of the light-emitting element illustrated in FIG.6A will be described.

The hole-injection layer 701 is a layer that contains a substance havinga high hole-injection property. As the substance having a highhole-injection property, for example, metal oxides such as molybdenumoxide, titanium oxide, vanadium oxide, rhenium oxide, ruthenium oxide,chromium oxide, zirconium oxide, hafnium oxide, tantalum oxide, silveroxide, tungsten oxide, and manganese oxide can be used. Aphthalocyanine-based compound such as phthalocyanine (abbreviation:H₂Pc) or copper(II) phthalocyanine (abbreviation: CuPc) can be used.

In addition, aromatic amine compounds which are low molecular organiccompounds or the like can be used.

Further alternatively, any of high molecular compounds (e.g., oligomers,dendrimers, or polymers) can be used. A high molecular compound to whichacid is added can be used.

In particular, a composite material in which an acceptor substance ismixed with an organic compound having a high hole-transport property ispreferably used for the hole-injection layer 701. With the use of thecomposite material in which an acceptor substance is mixed with asubstance having a high hole-transport property, excellent holeinjection from the lower electrode layer 103 can be obtained, whichresults in a reduction in the driving voltage of the light-emittingelement. Such a composite material can be formed by co-evaporation of asubstance having a high hole-transport property and an acceptorsubstance. The hole-injection layer 701 is formed using the compositematerial, whereby hole injection from the lower electrode layer 103 tothe EL layer 105 is facilitated.

As the organic compound for the composite material, any of a variety ofcompounds such as aromatic amine compounds, carbazole derivatives,aromatic hydrocarbons, and high molecular compounds (e.g., oligomers,dendrimers, and polymers) can be used. The organic compound used for thecomposite material is preferably an organic compound having a highhole-transport property. Specifically, a substance having a holemobility of 10⁻⁶ cm²/Vs or higher is preferably used. Note that anyother substance may also be used as long as the hole-transport propertythereof is higher than the electron-transport property thereof.

As the organic compound which can be used for the composite material, anaromatic amine compound, a carbazole derivative, an aromatic hydrocarboncompound having a high hole mobility can be used.

As the electron acceptor, organic compounds and transition metal oxidescan be given. In addition, oxides of metals belonging to Groups 4 to 8in the periodic table can be also given. Specifically, vanadium oxide,niobium oxide, tantalum oxide, chromium oxide, molybdenum oxide,tungsten oxide, manganese oxide, and rhenium oxide are preferable sincetheir electron-accepting property is high. Among these, molybdenum oxideis especially preferable since it is stable in the air and itshygroscopic property is low and is easily treated.

The composite material may be formed using the above electron acceptorand the above high molecular compound and used for the hole-injectionlayer 701.

The hole-transport layer 702 is a layer which contains a substance witha high hole-transport property. As the substance having a highhole-transport property, for example, an aromatic amine compound can beused. The substance has a hole mobility of 10⁻⁶ cm²/Vs or higher. Notethat any other substance may be used as long as the hole-transportproperty thereof is higher than the electron-transport property thereof.The layer containing a substance with a high hole-transport property isnot limited to a single layer, and two or more layers containing any ofthe above substances may be stacked.

In addition, a carbazole derivative, an anthracene derivative, or highmolecular compound having a high hole-transport property may also beused for the hole-transport layer 702.

For the layer 703 containing a light-emitting organic compound, afluorescent compound which exhibits fluorescence or a phosphorescentcompound which exhibits phosphorescence can be used.

Note that the layer 703 containing a light-emitting organic compound mayhave a structure in which any of the above light-emitting organiccompounds (guest material) is dispersed in another substance (hostmaterial). As a host material, a variety of kinds of materials can beused, and it is preferable to use a substance which has a higher lowestunoccupied molecular orbital level (LUMO level) than the light-emittingmaterial and has a lower highest occupied molecular orbital level (HOMOlevel) than the light-emitting material.

Plural kinds of materials can be used as the host material. For example,in order to suppress crystallization, a substance, which suppressescrystallization may be further added. In addition, a different kind ofsubstance may be further added in order to efficiently transfer energyto the guest material.

When a structure in which a guest material is dispersed in a hostmaterial is employed, crystallization of the layer 703 containing alight-emitting organic compound can be suppressed. Further,concentration quenching due to high concentration of a guest materialcan be suppressed.

A high molecular compound can be used for the layer 703 containing alight-emitting organic compound.

Further, by providing a plurality of layers each containing alight-emitting organic compound and making the emission colors of thelayers different, light emission of a desired color can be obtained fromthe light-emitting element as a whole. For example, in a light-emittingelement including two layers each containing a light-emitting organiccompound, the emission color of a first layer containing alight-emitting organic compound and the emission color of a second layercontaining a light-emitting organic compound are made complementary, sothat the light-emitting element as a whole can emit white light. Notethat the word “complementary” means color relationship in which anachromatic color is obtained when colors are mixed. That is, whencomplementary colored light emitted from substances is mixed,white-light emission can be obtained. This can be applied to alight-emitting element including three or more layers each containing alight-emitting organic compound.

The electron-transport layer 704 is a layer that contains a substancehaving a high electron-transport property. The substance having a highelectron-transport property is mainly one that have an electron mobilityof 10⁻⁶ cm²/Vs or higher. Further, the electron-transport layer is notlimited to a single layer and may be a stack of two or more layerscontaining any of the above substances.

The electron-injection layer 705 is a layer that contains a substancehaving a high electron-injection property. For the electron-injectionlayer 705, an alkali metal, an alkaline earth metal, or a compoundthereof, such as lithium, cesium, calcium, lithium fluoride, cesiumfluoride, calcium fluoride, or lithium oxide, can be used. A rare earthmetal compound such as erbium fluoride can also be used. Any of theabove substances for forming the electron-transport layer 704 can alsobe used.

Note that the hole-injection layer 701, the hole-transport layer 702,the layer 703 containing a light-emitting organic compound, theelectron-transport layer 704, and the electron-injection layer 705 whichare described above can each be formed by a method such as anevaporation method (e.g., a vacuum evaporation method), an ink-jetmethod, or a coating method.

Note that a plurality of EL layers may be stacked between the lowerelectrode layer 103 and the upper electrode layer 107 as illustrated inFIG. 6B. In that case, a charge generation layer 803 is preferablyprovided between a first EL layer 800 and a second EL layer 801 whichare stacked. The charge generation layer 803 can be formed using theabove composite material. Further, the charge generation layer 803 mayhave a stacked structure including a layer formed using the compositematerial and a layer formed using another material. In that case, alayer containing an electron donating substance and a substance having ahigh electron-transport property, a layer formed of a transparentconductive film, or the like can be used as the layer containing anothermaterial. As for a light-emitting element having such a structure,problems such as energy transfer and quenching hardly occur, and alight-emitting element which has both high emission efficiency and longlifetime can be easily obtained due to expansion in the choice ofmaterials. Moreover, a light-emitting element which providesphosphorescence from one EL layer and fluorescence from another EL layercan be easily obtained. This structure can be combined with any of theabove structures of the EL layer.

Further, by forming EL layers to emit light of different colors fromeach other, a light-emitting element as a whole can provide lightemission of a desired color. For example, by forming a light-emittingelement having two EL layers such that the emission color of a first ELlayer and the emission color of a second EL layer are complementarycolors, the light-emitting element can provide white light emission as awhole. Note that the word “complementary” means color relationship inwhich an achromatic color is obtained when colors are mixed. That is,when complementary colored light emitted from substances is mixed,white-light emission can be obtained. This can be applied to alight-emitting element having three or more EL layers.

As illustrated in FIG. 6C, the EL layer 105 may include thehole-injection layer 701, the hole-transport layer 702, the layer 703containing a light-emitting organic compound, the electron-transportlayer 704, an electron-injection buffer layer 706, an electron-relaylayer 707, and a composite material layer 708 which is in contact withthe upper electrode layer 107, between the lower electrode layer 103 andthe upper electrode layer 107.

It is preferable to provide the composite material layer 708 which is incontact with the upper electrode layer 107, in which case damage causedto the EL layer 105 particularly when the upper electrode layer 107 isformed by a sputtering method can be reduced. The composite materiallayer 708 can be formed using the above-described composite material inwhich an acceptor substance is mixed with an organic compound having ahigh hole-transport property.

Further, by providing the electron-injection buffer layer 706, aninjection barrier between the composite material layer 708 and theelectron-transport layer 704 can be reduced; thus, electrons generatedin the composite material layer 708 can be easily injected to theelectron-transport layer 704.

A substance having a high electron-injection property can be used forthe electron-injection buffer layer 706: for example, an alkali metal,an alkaline earth metal, a rare earth metal, or a compound of the abovemetal (e.g., an alkali metal compound (including an oxide such aslithium oxide, a halide, or a carbonate such as lithium carbonate orcesium carbonate), an alkaline earth metal compound (including an oxide,a halide, or a carbonate), or a rare earth metal compound (including anoxide, a halide, or a carbonate)) can be used.

In the case where the electron-injection buffer layer 706 contains asubstance having a high electron-transport property and a donorsubstance, the donor substance is preferably added so that the massratio of the donor substance to the substance having a highelectron-transport property is from 0.001:1 to 0.1:1. Note that as thedonor substance, an organic compound such as tetrathianaphthacene(abbreviation: TTN), nickelocene, or decamethylnickelocene can be usedas well as an alkali metal, an alkaline earth metal, a rare earth metal,and a compound of the above metal (e.g., an alkali metal compound (e.g.,an alkali metal compound (including an oxide such as lithium oxide, ahalide, or a carbonate such as lithium carbonate or cesium carbonate),an alkaline earth metal compound (including an oxide, a halide, or acarbonate), or a rare earth metal compound (including an oxide, ahalide, or a carbonate)). Note that as the substance having a highelectron-transport property, a material similar to the material for theelectron-transport layer 704 described above can be used.

Further, the electron-relay layer 707 is preferably formed between theelectron-injection buffer layer 706 and the composite material layer708. The electron-relay layer 707 is not necessarily provided; however,by providing the electron-relay layer 707 having a highelectron-transport property, electrons can be rapidly transported to theelectron-injection buffer layer 706.

The structure in which the electron-relay layer 707 is sandwichedbetween the composite material layer 708 and the electron-injectionbuffer layer 706 is a structure in which the acceptor substancecontained in the composite material layer 708 and the donor substancecontained in the electron-injection buffer layer 706 are less likely tointeract with each other; thus, their functions hardly interfere witheach other. Thus, an increase in the driving voltage can be prevented.

The electron-relay layer 707 contains a substance having a highelectron-transport property and is formed so that the LUMO level of thesubstance having a high electron-transport property is located betweenthe LUMO level of the acceptor substance contained in the compositematerial layer 708 and the LUMO level of the substance having a highelectron-transport property contained in the electron-transport layer704. In the case where the electron-relay layer 707 contains a donorsubstance, the donor level of the donor substance is controlled so as tobe located between the LUMO level of the acceptor substance in thecomposite material layer 708 and the LUMO level of the substance havinga high electron-transport property contained in the electron-transportlayer 704. As a specific value of the energy level, the LUMO level ofthe substance having a high electron-transport property contained in theelectron-relay layer 707 is preferably higher than or equal to −5.0 eV,more preferably higher than or equal to −5.0 eV and lower than or equalto −3.0 eV.

As the substance having a high electron-transport property contained inthe electron-relay layer 707, a phthalocyanine-based material or a metalcomplex having a metal-oxygen bond and an aromatic ligand is preferablyused.

As the metal complex having a metal-oxygen bond and an aromatic ligand,which is contained in the electron-relay layer 707, a metal complexhaving a metal-oxygen double bond is preferably used. The metal-oxygendouble bond has acceptor properties (properties of easily acceptingelectrons); thus, electrons can be transferred (donated and accepted)more easily. Further, the metal complex having a metal-oxygen doublebond is considered stable. Thus, the use of the metal complex having ametal-oxygen double bond makes it possible to drive the light-emittingelement at a low voltage more stably.

A phthalocyanine-based material is preferable as the metal complexhaving a metal-oxygen bond and an aromatic ligand. In particular, asubstance in which a metal-oxygen double bond is more likely to act onanother molecular in terms of a molecular structure and having a highacceptor property is preferably used.

Note that a phthalocyanine-based material having a phenoxy group ispreferable as the phthalocyanine-based materials described above.Specifically, a phthalocyanine derivative having a phenoxy group, suchas PhO-VOPc, is preferable. The phthalocyanine derivative having aphenoxy group is soluble in a solvent; thus, the phthalocyaninederivative has an advantage of being easily handled during formation ofa light-emitting element and an advantage of facilitating maintenance ofan apparatus used for deposition.

The electron-relay layer 707 may further contain a donor substance.Examples of the donor substance include organic compounds such astetrathianaphthacene (abbreviation: TTN), nickelocene, anddecamethylnickelocene, in addition to an alkali metal, an alkaline earthmetal, a rare earth metal, and a compound of the above metals (e.g., analkali metal compound (including an oxide such as lithium oxide, ahalide, and a carbonate such as lithium carbonate or cesium carbonate),an alkaline earth metal compound (including an oxide, a halide, and acarbonate), and a rare earth metal compound (including an oxide, ahalide, and a carbonate)). When such a donor substance is contained inthe electron-relay layer 707, electrons can be transferred easily andthe light-emitting element can be driven at a lower voltage.

In the case where a donor substance is contained in the electron-relaylayer 707, in addition to the materials described above, a substancehaving a LUMO level higher than the acceptor level of the acceptorsubstance contained in the composite material layer 708 can be used asthe substance having a high electron-transport property. Specifically,it is preferable to use a substance having a LUMO level of higher thanor equal to −5.0 eV, preferably higher than or equal to −5.0 eV andlower than or equal to −3.0 eV. Examples of such a substance include aperylene derivative and a nitrogen-containing condensed aromaticcompound. Note that a nitrogen-containing condensed aromatic compound ispreferably used for forming the electron-relay layer 707 because of itsstability.

Note that in the case where a donor substance is contained in theelectron-relay layer 707, the electron-relay layer 707 may be formed bya method such as co-evaporation of the substance having a highelectron-transport property and the donor substance.

The hole-injection layer 701, the hole-transport layer 702, the layer703 containing a light-emitting organic compound, and theelectron-transport layer 704 may each be formed using any of theabove-described materials.

In the above manner, the EL layer 105 of this embodiment can bemanufactured.

This embodiment can be combined with any of the other embodimentsdisclosed in this specification as appropriate.

Embodiment 4

In this embodiment, examples of a lighting device including alight-emitting device according to an embodiment of the presentinvention will be described with reference to FIGS. 7A and 7B.

According to an embodiment of the present invention, a lighting devicein which a light-emitting portion has a curved surface can be realized.

A light-emitting device of one embodiment of the present invention canbe used for lighting in a car; for example, lighting can be provided fora dashboard, ceiling, or the like.

FIG. 7A illustrates an interior lighting device 901, a desk lamp 903,and a planar lighting device 904 to which a light-emitting device of oneembodiment of the present invention is applied. Since the light-emittingdevice can have a larger area, it can be used as a lighting devicehaving a large area. Further, since the light-emitting device is thin,the light-emitting device can be mounted on a wall. Furthermore, thelight-emitting device can be used as a roll-type lighting device 902.

FIG. 7B illustrates another example of the lighting device. A desk lampillustrated in FIG. 7B includes a lighting portion 9501, a support 9503,a support base 9505, and the like. The lighting portion 9501 includes alight-emitting device according to an embodiment of the presentinvention. According to an embodiment of the present invention, alighting device having a curved surface or a lighting device including aflexible lighting portion can be realized in this manner. The use of aflexible light-emitting device for a lighting device as described abovenot only improves the degree of freedom in design of the lighting devicebut also enables the lighting device to be mounted onto a portion havinga curved surface, such as the ceiling or a dashboard of a car.

This embodiment can be combined with any of the other embodimentsdisclosed in this specification as appropriate.

This application is based on Japanese Patent Application serial no.2011-064678 filed with Japan Patent Office on Mar. 23, 2011, andJapanese Patent Application serial no. 2011-066900 filed with JapanPatent Office on Mar. 25, 2011, the entire contents of which are herebyincorporated by reference.

What is claimed is:
 1. A method for manufacturing a light-emittingdevice, comprising the steps of: forming a first pair of wirings and asecond pair of wirings over and in contact with a same surface of afirst substrate; forming a planarization layer over the first pair ofwirings, the second pair of wirings, and the first substrate; forming alower electrode layer over the planarization film and in electricalcontact with the first pair of wirings; forming a light-emitting organiccompound layer over the lower electrode layer; forming an upperelectrode layer over the light-emitting organic compound layer to form alight-emitting element, wherein the upper electrode layer is inelectrical contact with the second pair of wirings; forming anelectrical connector over a portion of the upper electrode layer;forming first and second pluralities of wirings over a second substrate;and bonding the first substrate and the second substrate so that theupper electrode layer is in contact with the first plurality of wirings,and the electrical connector is in direct contact with the secondplurality of wirings; forming a first lens array having a first diameterover the second substrate; and forming a second lens array having asecond diameter different from the first diameter over the secondsubstrate; wherein the second substrate is capable of transmitting lightemitted from the light-emitting element, wherein a sealant is providedbetween the upper electrode layer and the second substrate, wherein arefractive index of the sealant is higher than a refractive index of theupper electrode layer and is lower than a refractive index of the secondsubstrate, wherein the first plurality of wirings overlaps thelight-emitting organic compound layer, and wherein a portion of a bottomsurface of the lower electrode layer, a portion of a bottom surface ofthe light-emitting compound layer, and a portion of the bottom surfaceof the upper electrode layer are in direct contact with a top surface ofthe planarization film.
 2. A method for manufacturing a light-emittingdevice, comprising the steps of: forming a first pair of wirings and asecond pair of wirings over and in contact with a same surface of afirst substrate; forming a planarization layer over the first pair ofwirings, the second pair of wirings, and the first substrate; forming alight-emitting element in which a lower electrode layer, a layercontaining a light-emitting compound, and an upper electrode layer arestacked in this order over the planarization film and the same surfaceof the first substrate; forming an electrical connector over a portionof the upper electrode layer; forming a third wiring over a secondsubstrate; and bonding the first substrate and the second substrate sothat the upper electrode layer is in contact with a first portion of thethird wiring, and the electrical connector is in direct contact with asecond portion of the third wiring; forming a first lens array over thesecond substrate; and forming a second lens array having a seconddiameter different from the first diameter over the first lens array,wherein the lower electrode layer is in electrical contact with thefirst pair of wirings and the upper electrode layer is in electricalcontact with the second pair of wirings; wherein the second substrate iscapable of transmitting light emitted from the light-emitting element,wherein a sealant is provided between the upper electrode layer and thesecond substrate, wherein a refractive index of the sealant is higherthan a refractive index of the upper electrode layer and is lower than arefractive index of the second substrate, wherein a portion of a bottomsurface of the lower electrode layer, a portion of a bottom surface ofthe light-emitting compound layer, and a portion of the bottom surfaceof the upper electrode layer are in direct contact with a top surface ofthe planarization film.
 3. The method for manufacturing a light-emittingdevice according to claim 2, wherein the third wiring contains copper.4. The method for manufacturing a light-emitting device according toclaim 2, wherein the first substrate is formed using a metal or an alloywhose surface is subjected to an insulation treatment.
 5. The method formanufacturing a light-emitting device according to claim 2, wherein thethird wiring overlaps the layer containing the light-emitting compound.